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Random telegraph signals caused by a single dopant in a metal–oxide–semiconductor field effect transistor at low temperature

While the importance of atomic-scale features in silicon-based device for quantum application has been recognized and even the placement of a single atom is now feasible, the role of a dopant in the substrate has not attracted much attention in the context of quantum technology. In this paper, we re...

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Bibliografische gegevens
Hoofdauteurs: Kouta Ibukuro, Joseph William Hillier, Fayong Liu, Muhammad Khaled Husain, Zuo Li, Isao Tomita, Yoshishige Tsuchiya, Harvey Nicholas Rutt, Shinichi Saito
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: AIP Publishing LLC 2020-05-01
Reeks:AIP Advances
Online toegang:http://dx.doi.org/10.1063/5.0009585
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