A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviole...

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Autori principali: Ching-Lin Fan, Ming-Chi Shang, Bo-Jyun Li, Yu-Zuo Lin, Shea-Jue Wang, Win-Der Lee
Natura: Artigo
Lingua:Inglês
Pubblicazione: MDPI AG 2014-08-01
Serie:Materials
Soggetti:
amorphous indium–gallium–zinc–oxide (a-IGZO)
back-side exposure
self-aligned process
thin-film transistor (TFT)
two-photo-mask process
backside-lift-off (BLO)
Accesso online:http://www.mdpi.com/1996-1944/7/8/5761
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