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A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviole...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Ching-Lin Fan, Ming-Chi Shang, Bo-Jyun Li, Yu-Zuo Lin, Shea-Jue Wang, Win-Der Lee
Format: Artigo
Sprache:Inglês
Veröffentlicht: MDPI AG 2014-08-01
Schriftenreihe:Materials
Schlagworte:
Online Zugang:http://www.mdpi.com/1996-1944/7/8/5761
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