Lataa...
A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme
Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviole...
Tallennettuna:
| Päätekijät: | , , , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI AG
2014-08-01
|
| Sarja: | Materials |
| Aiheet: | |
| Linkit: | http://www.mdpi.com/1996-1944/7/8/5761 |
| Tagit: |
Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!
|