載入...
A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme
Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviole...
Na minha lista:
| Main Authors: | , , , , , |
|---|---|
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
MDPI AG
2014-08-01
|
| 叢編: | Materials |
| 主題: | |
| 在線閱讀: | http://www.mdpi.com/1996-1944/7/8/5761 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|