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THE INTENSITY OF SCATTERING OF CHARGE CARRIERS IN GRAPHENE, LOCATED ON A SUBSTRATE OF HEXAGONAL BORON NITRIDE
The results of modeling the scattering intensities of charge carriers in graphene located on a substrate of hexagonal boron nitride are presented. Graphene is considered a promising material for the formation of new semiconductor devices with good characteristics for the microwave and HF bands. Form...
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| Auteurs principaux: | , |
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| Format: | Artigo |
| Langue: | Russo |
| Publié: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-12-01
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| Collection: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Sujets: | |
| Accès en ligne: | https://doklady.bsuir.by/jour/article/view/2491 |
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