THE INTENSITY OF SCATTERING OF CHARGE CARRIERS IN GRAPHENE, LOCATED ON A SUBSTRATE OF HEXAGONAL BORON NITRIDE

The results of modeling the scattering intensities of charge carriers in graphene located on a substrate of hexagonal boron nitride are presented. Graphene is considered a promising material for the formation of new semiconductor devices with good characteristics for the microwave and HF bands. Form...

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Hlavní autoři: V. V. Muraviev, V. N. Mishchenko
Médium: Artigo
Jazyk:Russo
Vydáno: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-12-01
Edice:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Témata:
graphene
boron nitride
semiconductor structure
scattering intensity
electron transfer processes
monte – carlo method
On-line přístup:https://doklady.bsuir.by/jour/article/view/2491
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