THE INTENSITY OF SCATTERING OF CHARGE CARRIERS IN GRAPHENE, LOCATED ON A SUBSTRATE OF HEXAGONAL BORON NITRIDE

The results of modeling the scattering intensities of charge carriers in graphene located on a substrate of hexagonal boron nitride are presented. Graphene is considered a promising material for the formation of new semiconductor devices with good characteristics for the microwave and HF bands. Form...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Päätekijät: V. V. Muraviev, V. N. Mishchenko
Aineistotyyppi: Artigo
Kieli:Russo
Julkaistu: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-12-01
Sarja:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Aiheet:
graphene
boron nitride
semiconductor structure
scattering intensity
electron transfer processes
monte – carlo method
Linkit:https://doklady.bsuir.by/jour/article/view/2491
Tagit: Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!

Samankaltaisia teoksia