Analysis of Low-Frequency 1/f Noise Characteristics for MoTe<sub>2</sub> Ambipolar Field-Effect Transistors

Low-frequency electronic noise is an important parameter used for the electronic and sensing applications of transistors. Here, we performed a systematic study on the low-frequency noise mechanism for both p-channel and n-channel MoTe<sub>2</sub> field-effect transistors (FET) at differe...

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Detalhes bibliográficos
Main Authors: Bing Zhang, Congzhen Hu, Youze Xin, Yaoxin Li, Yiyun Xie, Qian Xing, Zhuoqi Guo, Zhongming Xue, Dan Li, Guohe Zhang, Li Geng, Zungui Ke, Chi Wang
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2022-04-01
Colecção:Nanomaterials
Assuntos:
MoTe<sub>2</sub>
low-frequency noise
carrier number fluctuations
contact resistance
Acesso em linha:https://www.mdpi.com/2079-4991/12/8/1325
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