Air Annealing Process for Threshold Voltage Tuning of MoTe<sub>2</sub> FET

A stable doping technique for modifying the conduction behaviour of two-dimensional (2D) nanomaterial-based transistors is imperative for applications based on low-power complementary oxide thin-film transistors. Achieving an ambipolar feature with a controlled threshold voltage in both the p- and n...

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Main Authors: Soojin Kim, Yeeun Roh, Younguk Choi, Ah Hyun Jun, Hojun Seo, Byeong-Kwon Ju
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2022-04-01
Colecção:Applied Sciences
Assuntos:
MoTe<sub>2</sub>
transition metal dichalcogenides
field-effect transistors
doping
threshold voltage
charge neutrality
Acesso em linha:https://www.mdpi.com/2076-3417/12/8/3840
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