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Pt/GaN Schottky Diode for Propene (C3H6) Gas Sensing
Pt/GaN Schottky diode based gas sensors were fabricated and characterized for their sensitivity towards propene (C3H6) at high operating temperatures. The GaN epitaxial layer was deposited onto sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Current-voltage (I-V) characterist...
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| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IFSA Publishing, S.L.
2008-11-01
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| Colecção: | Sensors & Transducers |
| Assuntos: | |
| Acesso em linha: | http://www.sensorsportal.com/HTML/DIGEST/november_08/P_349.pdf |
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