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Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications

In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge<sub>0.91</sub>Sn<sub>0.09</sub>-on-insulator (GeSnOI) platform. The responsivity was 0.24 and 0.06 A&#x002F;W at wavelengths of 1,600 and 2,003 nm, respectively. Through a systematic st...

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Main Authors: Bongkwon Son, Yiding Lin, Kwang Hong Lee, Joe Margetis, David Kohen, John Tolle, Chuan Seng Tan
Formáid: Artigo
Teanga:Inglês
Foilsithe: IEEE 2022-01-01
Sraith:IEEE Photonics Journal
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Rochtain Ar Líne:https://ieeexplore.ieee.org/document/9749904/
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