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Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications
In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge<sub>0.91</sub>Sn<sub>0.09</sub>-on-insulator (GeSnOI) platform. The responsivity was 0.24 and 0.06 A/W at wavelengths of 1,600 and 2,003 nm, respectively. Through a systematic st...
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| Hlavní autoři: | , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
IEEE
2022-01-01
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| Edice: | IEEE Photonics Journal |
| Témata: | |
| On-line přístup: | https://ieeexplore.ieee.org/document/9749904/ |
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