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Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices
Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the...
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| Autors principals: | , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
AIP Publishing LLC
2017-12-01
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| Col·lecció: | AIP Advances |
| Accés en línia: | http://dx.doi.org/10.1063/1.4994227 |
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