Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the...

पूर्ण विवरण

में बचाया:
ग्रंथसूची विवरण
मुख्य लेखकों: Zijin Wu, Tongtong Wang, Changqi Sun, Peitao Liu, Baorui Xia, Jingyan Zhang, Yonggang Liu, Daqiang Gao
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: AIP Publishing LLC 2017-12-01
श्रृंखला:AIP Advances
ऑनलाइन पहुंच:http://dx.doi.org/10.1063/1.4994227
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