Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

Abstract Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 106 cm− 2. With the electrical performance me...

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Bibliografiska uppgifter
Huvudupphovsmän: Hong Gu, Feifei Tian, Chunyu Zhang, Ke Xu, Jiale Wang, Yong Chen, Xuanhua Deng, Xinke Liu
Materialtyp: Artigo
Språk:Inglês
Publicerad: SpringerOpen 2019-01-01
Serie:Nanoscale Research Letters
Ämnen:
Vertical SBDs
Ge-doped GaN substrates
Reverse recovery time
HVPE
Länkar:http://link.springer.com/article/10.1186/s11671-019-2872-7
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