Wird geladen...
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
Abstract Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 106 cm− 2. With the electrical performance me...
Gespeichert in:
| Hauptverfasser: | , , , , , , , |
|---|---|
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
SpringerOpen
2019-01-01
|
| Schriftenreihe: | Nanoscale Research Letters |
| Schlagworte: | |
| Online Zugang: | http://link.springer.com/article/10.1186/s11671-019-2872-7 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|