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Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
Abstract Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 106 cm− 2. With the electrical performance me...
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| Autors principals: | , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
SpringerOpen
2019-01-01
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| Col·lecció: | Nanoscale Research Letters |
| Matèries: | |
| Accés en línia: | http://link.springer.com/article/10.1186/s11671-019-2872-7 |
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