Radiation and Annealing Effects on GaN MOSFETs Irradiated by 1 MeV Electrons

In this paper, the 650 V N-channel GaN MOSFETs are chosen as the research object to study the radiation and annealing effects under 1 MeV electron irradiation. The output, transfer, and breakdown characteristics are measured before and after electron irradiation. The experimental results show the va...

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Asıl Yazarlar: Tongshan Lu, Chenghua Wang
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: MDPI AG 2022-04-01
Seri Bilgileri:Electronics
Konular:
GaN MOSFET
electron irradiation
radiation damage
oxide trapped charge
interface charge
Online Erişim:https://www.mdpi.com/2079-9292/11/8/1186
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