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High-Performance Bidirectional Chemical Sensor Platform Using Double-Gate Ion-Sensitive Field-Effect Transistor with Microwave-Assisted Ni-Silicide Schottky-Barrier Source/Drain
This study proposes a bidirectional chemical sensor platform using ambipolar double-gate ion-sensitive field-effect transistors (ISFET) with microwave-assisted Ni-silicide Schottky-barrier (SB) source and drain (S/D) on a fully depleted silicon-on-insulator (FDSOI) substrate. The microwave-assisted...
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| Main Authors: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2022-03-01
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| Colecção: | Chemosensors |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2227-9040/10/4/122 |
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