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A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also...
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| Main Authors: | , , , , , , , , , |
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| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
MDPI AG
2017-10-01
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| Sraith: | Materials |
| Ábhair: | |
| Rochtain Ar Líne: | https://www.mdpi.com/1996-1944/10/11/1233 |
| Clibeanna: |
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