A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also...

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Bibliographische Detailangaben
Hauptverfasser: Lai Wang, Jie Jin, Chenziyi Mi, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li
Format: Artigo
Sprache:Inglês
Veröffentlicht: MDPI AG 2017-10-01
Schriftenreihe:Materials
Schlagworte:
light-emitting diodes (LEDs)
efficiency droop
GaN
InGaN
multiple quantum wells (MQWs)
carrier lifetime
Online Zugang:https://www.mdpi.com/1996-1944/10/11/1233
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