Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy

Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk bandgap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been difficult to realize. Here, we utilize alternating layer molecular be...

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Autores principales: Igor V. Pinchuk, Thaddeus J. Asel, Andrew Franson, Tiancong Zhu, Yuan-Ming Lu, Leonard J. Brillson, Ezekiel Johnston-Halperin, Jay A. Gupta, Roland K. Kawakami
Formato: Artigo
Lenguaje:Inglês
Publicado: AIP Publishing LLC 2018-08-01
Colección:APL Materials
Acceso en línea:http://dx.doi.org/10.1063/1.5041273
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