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Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy
Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk bandgap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been difficult to realize. Here, we utilize alternating layer molecular be...
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| Main Authors: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2018-08-01
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| Colecção: | APL Materials |
| Acesso em linha: | http://dx.doi.org/10.1063/1.5041273 |
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