Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of c...

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Main Authors: Stefania Castelletto, Abdul Salam Al Atem, Faraz Ahmed Inam, Hans Jürgen von Bardeleben, Sophie Hameau, Ahmed Fahad Almutairi, Gérard Guillot, Shin-ichiro Sato, Alberto Boretti, Jean Marie Bluet
Formáid: Artigo
Teanga:Inglês
Foilsithe: Beilstein-Institut 2019-12-01
Sraith:Beilstein Journal of Nanotechnology
Ábhair:
color centers
micropillars
proton irradiation
quantum sensing
silicon carbide
vacancy
Rochtain Ar Líne:https://doi.org/10.3762/bjnano.10.229
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