Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding

Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film thickness (15–500 nm) and surface roughness (0.3–1.6 nm) on room-temperature pressureless wafer bonding and sealing. The root-mean-sq...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Päätekijät: Michitaka Yamamoto, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga, Seiichi Takamatsu, Toshihiro Itoh, Eiji Higurashi
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI AG 2020-04-01
Sarja:Micromachines
Aiheet:
heterogeneous integration
wafer bonding
wafer sealing
room-temperature bonding
Au-Au bonding
surface activated bonding
Linkit:https://www.mdpi.com/2072-666X/11/5/454
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