Novel SiC/Si heterojunction LDMOS with electric field modulation effect by reversed L-shaped field plate

A novel SiC/Si heterojunction lateral double-diffused metal-oxidesemiconductor (LDMOS) with a reversed L-shaped field plate and a stepped oxide layer has been proposed to improve the tradeoff between the breakdown voltage (BV) and specific on-resistance (Ron,sp). The reversed L-shaped field plate is...

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Bibliografiset tiedot
Päätekijät: Qi Li, Leilei Yuan, Fabi Zhang, Haiou Li, Gongli Xiao, Yonghe Chen, Tangyou Sun, Xingpeng Liu, Tao Fu
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Elsevier 2020-03-01
Sarja:Results in Physics
Aiheet:
Reversed L-shaped field plate
Stepped oxide layer
Breakdown voltage (BV)
Specific on-resistance (Ron,Sp)
Heterojunction LDMOS
Linkit:http://www.sciencedirect.com/science/article/pii/S2211379719325756
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