Metastability problems in amorphous silicon
The results of study of the in uence of boron and phosphorous doping and hydrogen content on transport prop- erties and thermally induced metastability of LPCVD a-Si are reported. The thermally induced metastability has been observed in both unhydrogenated and hydrogenated P-doped a-Si films. Metas...
שמור ב:
| Principais autores: | , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
National Institute of Telecommunications
2001-03-01
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| סדרה: | Journal of Telecommunications and Information Technology |
| נושאים: | |
| גישה מקוונת: | https://jtit.pl/jtit/article/view/36 |
| תגים: |
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