Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs

Original extraction techniques of microwave small-signal model and technological parameters for SOI MOSFETs are presented. The characterization method combines careful design of probing and calibration structures, rigorous in situ calibration and a powerful direct extraction method. The proposed ch...

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Hlavní autoři:	Michel Goffioul, Danielle Vanhoenacker, Jean-Pierre Raskin
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	National Institute of Telecommunications 2000-12-01
Edice:	Journal of Telecommunications and Information Technology
Témata:	microelectronics microwave devices SOI MOSFET
On-line přístup:	https://jtit.pl/jtit/article/view/27
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