High-performance dual-mode extended SWIR photodetector based on p-WSe2/graphene/n-Ge p-g-n heterostructure
Mixed-dimensional van der Waals (vdW) heterostructures based on two-dimensional materials and three-dimensional semiconductors not only offer high-quality interfaces and flexible tunable band alignments but also exhibit excellent compatibility with complementary metal–oxide–semiconductor (CMOS) tech...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2025-04-01
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| coleção: | APL Materials |
| Acesso em linha: | http://dx.doi.org/10.1063/5.0237800 |
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