GaN-on-Si: Monolithically Integrated All-GaN Drivers for High-Voltage DC-DC Power Conversion
This paper presents a novel integrated half-bridge driver architecture using GaN-on-Si process for high-speed and high-voltage DC-DC converters. The entire circuit includes only enhancement mode (E-mode) and depletion-mode (D-mode) GaN transistors. The high-side driver circuit adopts the E-stacked E...
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| 主要な著者: | , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI AG
2022-05-01
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| シリーズ: | Applied Sciences |
| 主題: | |
| オンライン･アクセス: | https://www.mdpi.com/2076-3417/12/10/5109 |
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