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Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors

An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF<sub>4</sub> plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the...

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Autori principali: Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, Seung Mo Kim, Sang Kyung Lee, Byoung Hun Lee, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Natura: Artigo
Lingua:Inglês
Pubblicazione: MDPI AG 2020-10-01
Serie:Nanomaterials
Soggetti:
AlGaN/GaN HEMTs
enhancement-mode
fluorinated-gate
recessed gate
Accesso online:https://www.mdpi.com/2079-4991/10/11/2116
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