Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics
Abstract Ferroelectric memory devices are expected for low-power and high-speed memory applications. HfO2-based ferroelectric is attracting attention for its CMOS-compatibility and high scalability. Mesoscopic-scale grains, of which size is almost comparable to device size, are formed in HfO2-based...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
SpringerOpen
2022-11-01
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| coleção: | Nano Convergence |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1186/s40580-022-00342-6 |
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