Material Dispersion in Intrinsic GaAs for the Far-Infrared Range
An expression for the coefficient of material dispersion in intrinsic gallium arsenide for the far-infrared range is derived. From this result, the variation of the group index in the above range is discussed.
Gardado en:
| Principais autores: | , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Wiley
1998-01-01
|
| Series: | Active and Passive Electronic Components |
| Assuntos: | |
| Acceso en liña: | http://dx.doi.org/10.1155/1998/84657 |
| Tags: |
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|