Material Dispersion in Intrinsic GaAs for the Far-Infrared Range
An expression for the coefficient of material dispersion in intrinsic gallium arsenide for the far-infrared range is derived. From this result, the variation of the group index in the above range is discussed.
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| Auteurs principaux: | , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Wiley
1998-01-01
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| Collection: | Active and Passive Electronic Components |
| Sujets: | |
| Accès en ligne: | http://dx.doi.org/10.1155/1998/84657 |
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