Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam

Annealing behaviors of vacancy-type defects in Mg and N-implanted GaN were studied by positron annihilation. The major defect species in as-implanted samples was identified as Ga-vacancy (VGa)-type defects. For Mg-implanted GaN with sequential N-implantation after annealing above 1000°C, the...

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Detalhes bibliográficos

Principais autores:	A. Uedono, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Shima, S. F. Chichibu, J. Uzuhashi, T. Ohkubo, S. Ishibashi, K. Sierakowski, M. Bockowski
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2025-01-01
coleção:	IEEE Journal of the Electron Devices Society
Assuntos:	GaN ion implantation vacancy defects positrons
Acesso em linha:	https://ieeexplore.ieee.org/document/11142782/
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