High-performance 2D semiconductor floating gate transistors incorporating an ultrathin oxygen layer

Depositing high-quality tunneling layers for two-dimensional (2D) floating gate transistors remains challenging, as it requires precise process control and parameter optimization. Herein, we fabricated a floating gate structure incorporating a high-quality hafnium oxide (HfOx) tunneling layer achiev...

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Bibliografiske detaljer

Principais autores:	Wencheng Niu, Pengcheng Zeng, Zhengdao Xie, Tong Bu, Lin Tang, Sen Zhang, Bei Jiang, Xu Zhao, Xitong Hong, Xuming Zou, Xinpei Duan, Lei Liao, Xingqiang Liu
Format:	Artigo
Sprog:	Inglês
Udgivet:	Tsinghua University Press 2026-06-01
Serier:	Nano Research
Fag:	floating gate transistor logic gates native hfox oxides van der waals heterostructures
Online adgang:	https://www.sciopen.com/article/10.26599/NR.2026.94908578
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