Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures

ABSTRACT The integration of dielectric inserts into hafnia‐based ferroelectric stacks has emerged as a promising route to expand memory windows in ferroelectric NAND. However, the physical origin of the associated coercive voltage enhancement has remained unclear. Here, we resolve this long‐standing...

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Egile Nagusiak:	Prasanna Venkatesan, Hari Jayasankar, Salma Soliman, Priyankka Ravikumar, Lance Fernandes, Chinsung Park, Amrit Garlapati, Chengyang Zhang, Sanghyun Kang, Shimeng Yu, Suman Datta, Asif Khan, Mengkun Tian, Zheng Wang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Luca Larcher, Gaurav Thareja, Andrea Padovani
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	Wiley-VCH 2026-04-01
Saila:	Advanced Electronic Materials
Gaiak:	ferroelectrics heterostructures NAND
Sarrera elektronikoa:	https://doi.org/10.1002/aelm.202500702
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