Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures

ABSTRACT The integration of dielectric inserts into hafnia‐based ferroelectric stacks has emerged as a promising route to expand memory windows in ferroelectric NAND. However, the physical origin of the associated coercive voltage enhancement has remained unclear. Here, we resolve this long‐standing...

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主要な著者:	Prasanna Venkatesan, Hari Jayasankar, Salma Soliman, Priyankka Ravikumar, Lance Fernandes, Chinsung Park, Amrit Garlapati, Chengyang Zhang, Sanghyun Kang, Shimeng Yu, Suman Datta, Asif Khan, Mengkun Tian, Zheng Wang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Luca Larcher, Gaurav Thareja, Andrea Padovani
フォーマット:	Artigo
言語:	Inglês
出版事項:	Wiley-VCH 2026-04-01
シリーズ:	Advanced Electronic Materials
主題:	ferroelectrics heterostructures NAND
オンライン･アクセス:	https://doi.org/10.1002/aelm.202500702
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