High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics
This article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-InGaZnO thin-film transistors. The input voltage ra...
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| Autori principali: | , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IEEE
2024-01-01
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| Serie: | IEEE Journal of the Electron Devices Society |
| Soggetti: | |
| Accesso online: | https://ieeexplore.ieee.org/document/10637919/ |
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