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High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics

This article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-InGaZnO thin-film transistors. The input voltage ra...

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Principais autores: Sunaina Priyadarshi, Abidur Rahaman, Mohammad Masum Billah, Sabiqun Nahar, Md. Redowan Mahmud Arnob, Jin Jang
Format: Artigo
Sprog:Inglês
Udgivet: IEEE 2024-01-01
Serier:IEEE Journal of the Electron Devices Society
Fag:
LTPO
TFT
thin film transistor
dual-gate
SPICE simulation
level down shifter
Online adgang:https://ieeexplore.ieee.org/document/10637919/
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