Thermo-optic Coefficient of Electrochemically Etched Porous Silicon
Thermo-optic coefficient of electrochemically etched porous silicon layer was measured through temperature-dependent reflectance spectroscopy subjected to temperatures ranging from 302.15K to 594.15K. Porous silicon was fabricated via electrochemical etching of a p-type (100) silicon wafer in an eth...
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| Главные авторы: | , , , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Elsevier
2014-12-01
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| Серии: | International Journal of Electrochemical Science |
| Предметы: | |
| Online-ссылка: | http://www.sciencedirect.com/science/article/pii/S1452398123110285 |
| Метки: |
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