Thermo-optic Coefficient of Electrochemically Etched Porous Silicon
Thermo-optic coefficient of electrochemically etched porous silicon layer was measured through temperature-dependent reflectance spectroscopy subjected to temperatures ranging from 302.15K to 594.15K. Porous silicon was fabricated via electrochemical etching of a p-type (100) silicon wafer in an eth...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Elsevier
2014-12-01
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| coleção: | International Journal of Electrochemical Science |
| Assuntos: | |
| Acesso em linha: | http://www.sciencedirect.com/science/article/pii/S1452398123110285 |
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