Interface Modulation for the Heterointegration of Diamond on Si

Abstract Along with the increasing integration density and decreased feature size of current semiconductor technology, heterointegration of the Si‐based devices with diamond has acted as a promising strategy to relieve the existing heat dissipation problem. As one of the heterointegration methods, t...

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Hlavní autoři:	Xing Li, Li Wan, Chaonan Lin, Wen‐Tao Huang, Jing Zhou, Jie Zhu, Xun Yang, Xigui Yang, Zhenfeng Zhang, Yandi Zhu, Xiaoyan Ren, Ziliang Jin, Lin Dong, Shaobo Cheng, Shunfang Li, Chongxin Shan
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley 2024-06-01
Edice:	Advanced Science
Témata:	β‐SiC electron microscopy heterointegration interfacial structure MPCVD diamond
On-line přístup:	https://doi.org/10.1002/advs.202309126
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