Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)

Experimental results showed that for the diamond film prepared by hot filament chemical vapor deposition (HFCVD) using Ta filament, TaC existed between diamond and the silicon substrate, and diamond grew directly on TaC, while the inherent mechanism was not clear. Here, a special coherent interface...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Shaohua Lu, Xiongtao Zhang, Yuhao Zheng, Meiyan Jiang, Chengke Chen, Xiaojun Hu
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Taylor & Francis Group 2024-12-01
Цуврал:	Functional Diamond
Нөхцлүүд:	diamond film hfcvd tac diamond(111)/tac(111) interface graphite(002)/tac(111) interface
Онлайн хандалт:	http://dx.doi.org/10.1080/26941112.2023.2300764
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!