Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)

Experimental results showed that for the diamond film prepared by hot filament chemical vapor deposition (HFCVD) using Ta filament, TaC existed between diamond and the silicon substrate, and diamond grew directly on TaC, while the inherent mechanism was not clear. Here, a special coherent interface...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	Shaohua Lu, Xiongtao Zhang, Yuhao Zheng, Meiyan Jiang, Chengke Chen, Xiaojun Hu
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Taylor & Francis Group 2024-12-01
Schriftenreihe:	Functional Diamond
Schlagworte:	diamond film hfcvd tac diamond(111)/tac(111) interface graphite(002)/tac(111) interface
Online-Zugang:	http://dx.doi.org/10.1080/26941112.2023.2300764
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