Formation of Ohmic and Schottky contacts at metal/bilayer 2D SiC interfaces by suppressing metallization of monolayer contacts: A first-principles study
Two-dimensional (2D) graphene-like silicon carbide (SiC) is a potential candidate for channel materials in next-generation optoelectronic and electronic devices. The fabrication of high-quality metal contacts (Ohmic or Schottky) is critical to the development of 2D SiC-based devices. However, the in...
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| Principais autores: | , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
AIP Publishing LLC
2026-01-01
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| Serier: | AIP Advances |
| Online adgang: | https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0306661/20860520/015007_1_5.0306661.pdf |
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