Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors

Abstract Developing Ohmic contact systems or achieving low contact resistance is significant for high‐performance semiconductor devices. This work comprehensively investigates the interfacial properties of CrX2N4 (X = C, Si) based field‐effect transistors (FETs) with different metal (Ag, Au, Cu, Ni,...

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Xehetasun bibliografikoak

Egile Nagusiak:	Yu Shu, Yongqian Liu, Zhou Cui, Rui Xiong, Yinggan Zhang, Chao Xu, Jingying Zheng, Cuilian Wen, Bo Wu, Baisheng Sa
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	Wiley-VCH 2023-03-01
Saila:	Advanced Electronic Materials
Gaiak:	fermi level pinning field‐effect transistors metal–semiconductor contacts Ohmic contact Schottky barrier
Sarrera elektronikoa:	https://doi.org/10.1002/aelm.202201056
Etiketak:	Etiketa erantsi Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!