Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps
In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels. With an increase in the source gas flow rate, a notable transition in the crystal...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , , , , , |
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| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
MDPI AG
2023-07-01
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| Cyfres: | Crystals |
| Pynciau: | |
| Mynediad Ar-lein: | https://www.mdpi.com/2073-4352/13/7/1123 |
| Tagiau: |
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