Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers

The integration of thick homoepitaxial layers on silicon carbide (SiC) substrates is critical for enabling high-voltage power devices, yet it remains challenged by substrate surface quality and wafer geometry evolution. This study investigates the relationship between substrate preparation—particula...

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Principais autores:	Chi-Hsiang Hsieh, Chiao-Yang Cheng, Yi-Kai Hsiao, Zi-Hao Wang, Chang-Ching Tu, Chao-Chang Arthur Chen, Po-Tsung Lee, Hao-Chung Kuo
Formato:	Artigo
Idioma:	Inglês
Publicado:	MDPI AG 2025-06-01
Series:	Micromachines
Assuntos:	SiC thick epitaxial SiC defect propagation SiC wafer geometry
Acceso en liña:	https://www.mdpi.com/2072-666X/16/6/710
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